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SiC FETs: Easily Driving Higher Power Density

SiC FETs: Easily Driving Higher Power Density

  • 2020-07-28
  • UnitedSiC
  • 관리자

UnitedSiC Videos/Webinars - UnitedSiC


Join the webinar to discover how the pursuit for lower RDS(on) in SiC FET devices (wide bandgap) is helping power designers successfully deliver next-generation performance and innovation through higher efficiency, lower losses, smaller form factors and reduced total cost versus silicon MOSFETs and other silicon carbide MOSFETs. Agenda: - Introducing new UF3SC SiC FETs – RDS(on) less than 10mΩ - The cascode technology “secret sauce” - New design possibilities - EV inverter - Fast battery charging - Solar inverter - Circuit protection - Design support/content


  • 적용분야:  

    Power Management, Automotive

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